Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique

نویسندگان

چکیده

Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as most reported IGBTs, drastic, sudden temperature rise, peak SCF current widespread owing a relatively long delay of protection subsystem. This paper proposes strategy limit junction rise by limiting adding small value resistor IGBT emitter. Second, it reduces much less than saturated current. With proposed control approach, during is controlled, preventing significant failure IGBTs. The extension permissible time achieved even for cases with temporary arcs. A simple loop activates condition does not create slow transients IGBT. results this validated through simulation experiment.

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ژورنال

عنوان ژورنال: Energies

سال: 2021

ISSN: ['1996-1073']

DOI: https://doi.org/10.3390/en14217397